Active clamp implementation in complementary BiCMOS process with high voltage BJT devices

摘要

A small footprint active clamp design with low voltage CMOS and high voltage BJT components in complementary BiCMOS process is proposed, analyzed by mixed-mode simulation and experimentally validated. The new clamp is composed from stacked NMOS driver and power BJT to achieve appropriate voltage tolerance. Both NPN and PNP-based versions of the clamp are compared to the stacked NMOS clamp.