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High voltage tolerant, small footprint BJT-CMOS active clamp
High voltage tolerant, small footprint BJT-CMOS active clamp
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机译:耐高压,小尺寸BJT-CMOS有源钳位
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摘要
In an active clamp implemented in a 5V complementary BiCMOS process, the footprint of the active clamp, which includes at least one NMOS clamp stack, is reduced by introducing a BJT into the circuit to allow the number of NMOS clamp stacks to be reduced.
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