LATTICE MATCHED DILUTE NITRIDE MATERIALS FOR III-V HIGH-EFFICIENCY MULTI-JUNCTION SOLAR CELLS: GROWTH PARAMETER OPTIMIZATION IN MOLECULAR BEAM EPITAXY

摘要

We report on growth parameter optimization for fabrication GaInNAs materials with nitrogenconcentrations ranging from 1 to 6%. These compounds, refered as dilute nitrides, are a promising choice fordeveloping 1-eV sub-cells required in III-V high-efficiency multi-junction solar cells. Specifically, we havecompared the effects of growth temperature and thermal annealing onto optical and structural properties of GaInNAsp-i-n diodes lattice matched to GaAs. When used in a 3-junction GaInP/GaAs/GaInNAs solar cell, the dilute nitridestructure could generate a short-circuit current density of ～12 mA/cm2 measured in outdoor conditions.