Back-side De-processing using CMP for bulk silicon 40-nm graphics processors

摘要

A back-side de-processing process by chemical mechanical polishing (CMP) is developed. The process has been optimized to produce repeatable results. The process is capable of exposing the circuitry of the die uniformly and is able to target more than one area for units with multiple defect locations; front-side de-processing process has difficulty achieving the same results due to the unevenness of the die