Silicon de-processing chemical for junction profile inspection

摘要

PURPOSE: Silicon removing-chemical solutions are provided to analyze exactly the profile of a source/drain junction by removing selectively an ion-implanted silicon region alone. CONSTITUTION: Silicon removing-chemical solutions contain HF, HNO3, CH3COOH, HO(CH2)2OH and Cr2o3. The moll rate for HF: HNO3: CH3COOH: HO(CH2)2OH: Cr2O3 is 1: 15: 20: 5: 0.5. A sample is dipped in the chemical-solutions at a room temperature for 7 to 12 seconds. The moll rate has a variable range of -5 % to +5 %.