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Use of neural network to model the FTIR spectra of PECVD silicon nitride films for cardiovascular pressure sensor applications

机译:使用神经网络对PECVD氮化硅膜的FTIR光谱进行建模以用于心血管压力传感器

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In this paper, the empirical process models based on neural network are applied to discover the relationship between inputs and outputs of the plasma enhanced chemical deposition (PECVD) silicon nitride process. The design of experiments are based on a 26–2 fractional factorial experiment with four center replicate on six factors which are 1) the SiH4 flow rate, 2) the NH3 flow rate, 3) the N2 flow rate, 4) the chamber pressure, 5) the radio frequency (RF) power/distance between the wafer base and shower gas, and 6) the deposition temperature. Once these experiments are performed, different neural networks are applied to identify these six inputs to the chemical bonding information from the FTIR measurements. The best performances of neural networks for each response are selected based on the smallest prediction error. Then the three-dimensional surface plots are generated to qualitatively interpret factor effects. The corrosion testing in saline solution based on a potentiostatic measurement of an aluminum film with the protective PECVD silicon nitride is demonstrated. This measurement could be used as a tool to identify the best dense PECVD silicon nitride film in order to improve the protective performance of the existing recipe. The silicon nitride film is used as the final passivation layer of the cardiovascular pressure sensor.
机译:在本文中,基于神经网络的经验过程模型被用于发现等离子体增强化学沉积(PECVD)氮化硅过程的输入和输出之间的关系。实验设计基于2 6–2 分数阶乘实验,在六个因素上进行四个中心重复,这些因素是1)SiH 4 流速,2)NH 3 流量,3)N 2 流量,4)腔室压力,5)晶片基座与喷淋气体之间的射频(RF)功率/距离,以及6)沉积温度。一旦执行了这些实验,就会应用不同的神经网络从FTIR测量中识别出这六个输入到化学键合信息。基于最小的预测误差,为每个响应选择神经网络的最佳性能。然后生成三维表面图,以定性解释因子效应。基于保护性PECVD氮化硅,基于铝膜的恒电位测量,证明了在盐溶液中的腐蚀测试。该测量可以用作识别最佳致密PECVD氮化硅膜的工具,以改善现有配方的保护性能。氮化硅膜用作心血管压力传感器的最终钝化层。

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