首页> 外文会议>2011 16th OptoeElectronics and Communications Conference >Stripe width dependence of internal quantum efficiency and carrier injection delay in lateral current injection GaInAsP/InP lasers
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Stripe width dependence of internal quantum efficiency and carrier injection delay in lateral current injection GaInAsP/InP lasers

机译:侧向电流注入GaInAsP / InP激光器中内部量子效率和载流子注入延迟的条纹宽度依赖性

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摘要

Internal quantum efficiency and carrier injection delay time in lateral-current-injection (LCI) lasers fabricated on a semi-insulating (SI)-InP substrate were evaluated for various stripe widths. As the results, it was confirmed that narrower stripe width (< 2 µm) can give better static and dynamic performances.
机译:针对各种条带宽度,评估了在半绝缘(SI)-InP衬底上制造的横向电流注入(LCI)激光器中的内部量子效率和载流子注入延迟时间。结果证实,较窄的条带宽度(<2 µm)可以提供更好的静态和动态性能。

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