Low temperature Pyrex/silicon wafer bonding via a single intermediate parylene layer

摘要

We introduce a new low temperature (280 °C) parylene-C wafer bonding technique, where parylene-C bonds directly a Pyrex wafer to a silicon wafer with either a Si, SiO2 or Si3N4 surface with a bonding strength up to 23 MPa. The technique uses a single layer of parylene-C deposited only on the Pyrex wafer. Moreover, the process is compatible for bonding any type of wafer with small-sized micropatterned features, or containing microfluidic channels and electrodes. This technique can be an alternative for conventional bonding methods like anodic bonding in applications requiring a low temperature and diverse bonding interfaces.