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Analysis of ZAO Thin Films by DC reaction magnetron sputtereing

机译:直流反应磁控溅射法分析ZAO薄膜

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The high quality ZAO thin films were produced by DC reaction magnetron sputtering technology. The XRD, electrical and optical properties of ZAO thin films were particularly investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure, and Al2O_3 crystal phase are not found. At the same time, the high quality ZAO films with the minimum resistivity of 4.5x×10~4Q-cm, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.
机译:通过直流反应磁控溅射技术生产出高质量的ZAO薄膜。特别研究了ZAO薄膜的XRD,电学和光学性质。结果表明,ZAO薄膜为多方六方纤锌矿结构,未发现Al2O_3晶相。同时,获得了高质量的ZAO薄膜,其最小电阻率为4.5x×10〜4Q-cm,可见光区域的透射率在80%以上,红外区域的反射率在70%以上。

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