首页> 外文会议>IUMRS International Conference in Asia;IUMRS-ICA 2010 >Low-Temperature Sintering of ZnO and B2O_3 Co-doped (K_0.5Na_0.5)NbO_3 Lead-Free Piezoelectric Ceramics
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Low-Temperature Sintering of ZnO and B2O_3 Co-doped (K_0.5Na_0.5)NbO_3 Lead-Free Piezoelectric Ceramics

机译:ZnO和B2O_3共掺杂(K_0.5Na_0.5)NbO_3无铅压电陶瓷的低温烧结

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Lead-free K_0.5Na_0.5NbO_3-xwt% (0.4ZnO-0.6B2O_3) ceramics were synthesized by conventional ceramics process. The co-doping of ZnO and B2O_3 can decrease the sintering temperature of K_0.5Na_0.5NbCb ceramics to 1000°C, and the samples show high relative density around 96%. X-ray diffraction (XRD) reveals that Co-doping of ZnO and B2O_3 induces lattice distortion. Liquid phase is observed by scanning electron microscopy (SEM), which is resulted from the addition of ZnO and B2O_3. The ceramics show better piezoelectric and dielectric properties with planar electromechanical coupling factor kp= 40.7%, piezoelectric constant d_33= 117pC/N, dielectric constant ε~T3/eo=318.6, and loss tangent tan<5=0.034.
机译:通过常规陶瓷工艺合成了无铅的K_0.5Na_0.5NbO_3-xwt%(0.4ZnO-0.6B2O_3)陶瓷。 ZnO和B2O_3的共掺杂可以将K_0.5Na_0.5NbCb陶瓷的烧结温度降低至1000°C,并且样品的相对密度较高,约为96%。 X射线衍射(XRD)表明ZnO和B2O_3的共掺杂引起晶格畸变。通过扫描电子显微镜(SEM)观察到液相,这是由于ZnO和B2O_3的添加而产生的。陶瓷表现出更好的压电和介电性能,平面机电耦合系数kp = 40.7%,压电常数d_33 = 117pC / N,介电常数ε〜T3 / eo = 318.6,损耗角正切tan <5 = 0.034。

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