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Fabrication of LSGM thin film electrolyte on LSCM anode by RF magnetron sputtering for IT-SOFC

机译:用于IT-SOFC的RF磁控溅射在LSCM阳极上制备LSGM薄膜电解质

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La_(0.9)Sr_(0.1)Ga_(0.8)Mg_(0.2)O_(3-δ) (LSGM) thin film electrolytes were fabricated on La_(0.7)Sr_(0.3)Cr_(0.5)Mn_(0.5)O_(3-δ) (LSCM) porous anodes by radio-frequency (RF) magnetron sputtering. The formation and microstructure of LSGM thin films were characterized by X-ray diffraction(XRD) and scanning electron microscopy (SEM). The effects of different sputtering conditions, such as Ar gas pressure, substrate temperature and sputtering power, on the performance of LSGM electrolyte film were estimated. Dense LSGM thin film electrolytes with thickness of about 2um, which are compatible with LSCM-based anodes and without crack, have been successfully fabricated on LSCM-based anode supports by RF magnetron sputtering when sputtering power density is 5.2W·cm~(-2), Ar gas pressure is 5Pa and substrate temperature is 300°C. It is found that high sputtering power density and high Ar gas pressure, as well as high substrate temperature, are beneficial to deposition of dense electrolyte thin film, close bonding of electrolyte thin film with anode substrate, and formation of large three phase boundaries between anode and electrolyte.
机译:在La_(0.7)Sr_(0.3)Cr_(0.5)Mn_(0.5)O_(3)上制备La_(0.9)Sr_(0.1)Ga_(0.8)Mg_(0.2)O_(3-δ)(LSGM)薄膜电解质-δ)(LSCM)多孔阳极通过射频(RF)磁控溅射。通过X射线衍射(XRD)和扫描电子显微镜(SEM)对LSGM薄膜的形成和微观结构进行了表征。估算了不同溅射条件(如氩气压力,衬底温度和溅射功率)对LSGM电解质膜性能的影响。当溅射功率密度为5.2W·cm〜(-2)时,采用RF磁控溅射技术成功地在LSCM基阳极支架上制备了厚度约2um的致密LSGM薄膜电解质,该电解质与LSCM基阳极兼容,且无裂纹。 ),Ar气压为5Pa,基板温度为300°C。发现高的溅射功率密度和高的Ar气压以及高的衬底温度有利于致密的电解质薄膜的沉积,电解质薄膜与阳极衬底的紧密结合以及在阳极之间形成大的三相边界。和电解质。

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