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The Growth Mechanism of LSGM Thin Film Electrolyte by RF Magnetron Sputtering

机译:磁控溅射LSGM薄膜电解质的生长机理

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In order to discuss the growth mechanism of LSGM films,La0.9Sr0.1Ga0.8Mg0.2O2.85 (LSGM) thin films electrolytes were fabricated on Si substrates by RF magnetron sputtering.The atomic force microscope (AFM) and X-ray diffraction analyzer (XRD) were used to analyze film surface morphology and phase components.The results show that LSGM films are grown with island structure.When the deposition time increases to 30min,the preferred growth orientations appears,which is (112) crystal face.The longer deposition time is,and the rougher the surface possesses.
机译:为了探讨LSGM薄膜的生长机理,通过射频磁控溅射在Si衬底上制备了La0.9Sr0.1Ga0.8Mg0.2O2.85(LSGM)薄膜电解质。原子力显微镜(AFM)和X射线衍射分析仪(XRD)分析了薄膜的表面形貌和相成分。结果表明LSGM薄膜以岛状结构生长。当沉积时间增加到30min时,出现了优选的生长取向,即(112)晶面。沉积时间越长,表面越粗糙。

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