首页> 外文会议>Silicon carbide and related materials 2010 >Donor-Acceptor Pair Luminescence of P-AI and N-AI Pairs in 3C-SiC and the lonization Energy of the P Donor
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Donor-Acceptor Pair Luminescence of P-AI and N-AI Pairs in 3C-SiC and the lonization Energy of the P Donor

机译:3C-SiC中P-AI和N-AI对的供体-受体对发光和P供体的电离能

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The analysis of the donor-acceptor pair luminescence of P-Al and N-Al pairs obtained recently for the cubic 3C polytype of SiC is viewed in some detail. A detailed consideration is given to the fitting procedure applied to the P-Al and N-Al spectra. Fit with theoretical models of spectra of type I and type II are applied to both N-Al and P-Al experimental spectra, and it is demonstrated that only contribution from P on Si site is observable in the presented samples. The accuracy of the obtained phosphorus ionization energy of 48.1 meV is also discussed.
机译:详细分析了最近对立方立方3C型SiC获得的P-Al和N-Al对的供体-受体对发光的分析。详细考虑了应用于P-Al和N-Al光谱的拟合过程。与I型和II型光谱的理论模型拟合,将其应用于N-Al和P-Al实验光谱,并证明了在提出的样品中仅可观察到P在Si位点上的贡献。还讨论了获得的48.1 meV的磷电离能的精度。

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