A low-temperature and highly reproducible fabrication process for high-mobility solution-processed small molecule field-effect transistors

摘要

A simple, low-temperature, and reproducible fabrication process of dioctylbenzothienobenzothiophene top-gate field-effect transistors has been reported. A total of 116 devices exhibit high mobilities of 1.59±0.40 cm~2/Vs, low threshold voltages of -1.48±3.02 V, and excellent electrical stability against a 10~4-s-duration gate-bias stress of-1.2 MV/cm.