High-mobility air-stable n-type field-effect transistors based on large-area solution-processed organic single-crystal arrays

摘要

Solution-processed n-type organic semiconductor microanocrystals (OSMCs) are fundamental elements for developing low-cost,large-area,and all organic logic/complementary circuits.However,the development of air-stable,highly aligned n-channel OSMC arrays for realizing high-performance devices lags far behind their p-channel counterparts.Herein,we present a simple one-step slope-coating method for the large-scale,solution-processed fabrication of highly aligned,air-stable,n-channel ribbon-shaped single-crystalline N,N'-bis(2-phenylethyl)-perylene-3,4∶9,10-tetracarboxylic diimide (BPE-PTCDI) arrays.The slope and patterned photoresist (PR) stripes on the substrate are found to be crucial for the formation of large-area submicron ribbon arrays.The width and thickness of the BPE-PTCDI submicron ribbons can be finely tuned by controlling the solution concentration as well as the slope angle.The resulting BPE-PTCDI submicron ribbon arrays possess an optimum electron mobility up to 2.67 cm2·V-1·s-1 (with an average mobility of 1.13 cm2·V-1·s-1),which is remarkably higher than that of thin film counterparts and better than the performance reported previously for single-crystalline BPE-PTCDI-based devices.Moreover,the devices exhibit robust air stability and remain stable after exposing in air over 50 days.Our study facilitates the development of air-stable,n-channel organic field-effect transistors (OFETs) and paves the way towards the fabrication of high-performance,organic single crystal-based integrated circuits.