Performance of InAsSb-based Infrared Detectors with nBn Design

摘要

Our group is investigating nBn detectors based on bulk InAs_((1_x))Sb_(x) absorber (n) and contacts (n) with an AlAs_((1.X))Sb_((x)) barrier (B). The wide-band-gap barrier material exhibits a large conduction band offset and small valence band offset with respect to the narrow-band-gap absorber material. An important matter to explore in this design is the barrier parameters (material, composition and doping concentration) and how they effect the operation of the device. This paper investigates AlAs_((1.X))Sb_((x)) barriers with different compositions and doping levels and their effect on detector characteristics, in particular, dark current density, responsivity and specific detectivity.