Reprint of 'Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - grown on GaAs, using an interfacial misfit array, and on native GaSb'

摘要

InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At -0.1 V operating bias, 200 K dark current densities of 1.4 x 10(-5) A cm(-2) (on GaAs) and 4.8 x 10(-6) A cm(-2) (on GaSb) were measured. At the same temperature, specific detectivity (D*) figures of 1.2 x 10(16) Jones (on GaAs) and 7.2 x 10(16) Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4K bandgap. of the absorption layers (0.32-0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers. (C) 2014 Elsevier B.V. All rights reserved.