Substrate doping induced hole barrier lowering in PtSi-Si Schottky diode and its implication to PtSi Source/Drain SBFETs

摘要

In this paper, Schottky barrier height (SBH) lowering of Pt silicide-Si diodes is demonstrated empirically and we study its implications to Schottky-barrier (SB) source/drain p-FETs. We show that the hole SBH can be lowered through an image-force mechanism by increasing the n-Si substrate doping, which can lead to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations show that the channel doping concentration is also critical for short-channel n- & p- SOI SBFETs performance.