4 bits/cell 96 Layer Floating Gate 3D NAND with CMOS under Array Technology and SSDs

摘要

This paper describes 4 bits/cell (QLC) 3D NAND based on 96 layer Floating Gate (FG) cell and CMOS under Array (CuA), achieving high areal density, performance, and reliability. More than 10million QLC FG 3D NAND SSDs have been shipped for both Client as well as Datacenter SSD applications, which is a significant milestone towards making 4 bits/cell NAND mainstream in the industry.