A CMOS programmable analog memory-cell array using floating-gatecircuits

摘要

The complexity of analog VLSI systems is often limited by thennumber of pins on a chip rather than by the die area. Currently, manynanalog parameters and biases are stored off-chip. Moving parameternstorage on-chip could save pins and allow us to create complexnprogrammable analog systems. In this paper, we present a design for annon-chip nonvolatile analog memory cell that can be configured innaddressable arrays and programmed easily. We use floating-gate MOSntransistors to store charge, and we use the processes of tunneling andnhot-electron injection to program values. We have fabricated twonversions of this design: one with an nFET injection mechanism and onenwith a pFET injection mechanism. With these designs, we achieve greaternthan 13-bit output precision with a 39-dB power-supply rejection rationand no crosstalk between memory cells