Spin-Orbit Torque MRAM for ultrafast embedded memories: from fundamentals to large scale technology integration

摘要

Spin-orbit torque (SOT) magnetic random access memory (MRAM) is an emerging non-volatile memory that offers efficient and reliable sub-ns switching. It is considered as a promising candidate to tackle the replacement of SRAM memories in low level caches (L1-3). In this paper, we review the fundamentals of spin-orbit torque and we describe full-scale integration of perpendicular magnetized SOT-MRAM devices on 300mm wafers, using manufacturable methods and CMOS compatible processes. We demonstrate state-of-the-art properties of W-based top-pinned magnetic tunnel junction (MTJ) with perpendicularly magnetic anisotropy (PMA) that possess large endurance (>10^{11), and that can be switched at subnanosecond regimes (210ps) with power as low as 130pJ on 60nm devices. We conclude by opening current research focus and recent progress made by our team.}