High speed low power SOT (SPIN-ORBIT TORQUE) Auxiliary STT-MRAM (SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY) Bit cell array

摘要

An MRAM (magnetic random access memory) array containing several bit cells is described. Each of the bit cells includes a perpendicular magnetic tunnel junction (pMTJ) having a reference layer, a barrier layer supporting the reference layer, and a free layer supporting the barrier layer - a magnetic tunnel junction with perpendicular anisotropy. A spin-hole conductive material layer supports the free layer. The driver is operable to set the state of at least one bit cell of the plurality of bit cells, and the driver simultaneously generates a spin-hole transfer (SOT) current flowing through the pMTJ through a spin- To drive current along the conductive material and to drive additional current through a portion of the pMTJ and the spin-hole conductive material layer, wherein the additional current is applied to the pMTJ via the pMTJ using spin-transfer-torque ) Current.;