Demonstration of Conductive Bridging Random Access Memory (CBRAM) in Logic CMOS Process

摘要

Today's main stream NVM technologies require operational conditions that are incompatible with modern low voltage logic CMOS designs. This characteristic results in complex integration issues as well as costly process and array concept especially for embedded NVM use models. Conductive bridging memory cell (CBRAM) technology is an attractive emerging memory technology that offers simple integration and scalable operational conditions. These unique features make CBRAM technology an ideal candidate for embedded applications. In this paper, we have shown successful integration of CBRAM into Copper and Aluminum back end logic CMOS processes with minimal number of added masks.