We have investigated a stochastic model of the resistive switching mechanism in resistive random access memory (RRAM) based on electron hopping. The distribution of electron occupation probabilities analyzed with our approach is in good agreement with previous work. In particular, a low occupation region is formed near the cathode for bipolar behavior or near the anode for unipolar behavior. Our simulation of the temperature dependence of the electron occupation probability near the anode and the cathode shows an amazing stability of the low occupation region. This result indicates high robustness of failure-free RRAM switching from a state with low resistance to a state with high resistance for elevated temperature.
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