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Cu wire bonding with Cu BSOB for SiP on6; stacked die application: Challenges on6; solutions

机译:用于SiP on的与Cu BSOB的Cu引线键合;叠层模具应用:挑战6;解决方案

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In this paper, key challenges for copper (Cu) BSOB wire bonding process and its solutions are discussed. Cu wire bonding is an alternative interconnection technology for gold (Au) wire bonding. Cu wire is attractive because of its cost, electrical and thermo-mechanical properties. BSOB is the short form of bond-stitch-on-ball. It is used on devices that require die-die wire bonding in multi chip modules (MCM), stacked die and system in package (SiP) applications. BSOB also widely used while performing reverse bonding. Replacing gold (Au) wire with Cu wire in the wire bonding process comes with technical challenges. In this study, the process and parameter requirements for a stable Cu BSOB process are identified. They are bonding concept and special software features for Cu wire bonding to have minimum bonding stress to the bond pad, Cu bump with flat top surface without any protruded tail of the Cu bump, oxidation control of the Cu bump and stable stitch bond parameters good enough to break the Cu oxide on the Cu bump at the same this should not be high to make the wire skid. The Cu BSOB process also applied in few case studies.
机译:在本文中,讨论了铜(Cu)BSOB引线键合工艺及其解决方案面临的主要挑战。铜线键合是金(Au)线键合的另一种互连技术。铜线因其成本,电气和热机械性能而具有吸引力。 BSOB是粘合球的简称。它用于需要在多芯片模块(MCM),堆叠式芯片和系统级封装(SiP)应用中进行芯片-芯片引线键合的设备上。 BSOB在执行反向绑定时也被广泛使用。在引线键合过程中用铜线代替金(Au)线带来了技术挑战。在这项研究中,确定了稳定的Cu BSOB工艺的工艺和参数要求。它们是用于铜丝键合的键合概念和特殊软件功能,可最大程度地减小对键合焊盘的键合应力,具有平坦表面且无任何凸点的铜凸块的铜凸块,对铜凸块的氧化控制以及足够稳定的针脚接合参数同时破坏铜凸块上的铜氧化物,不应太高,以使金属丝打滑。 Cu BSOB工艺也应用在少数案例研究中。

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