High frequency characterization of through silicon via structure

摘要

In 3D package, through silicon via (TSV) have been used to achieve smaller size, better performance stacked package. However to effectively utilize TSV for high frequency package design, the high frequency performance of TSV structure has to be precisely characterized. In this work, a method that allows the high frequency extraction of TSV's S-parameter is presented. Extraction is basically done by using a number of line test structures and back-to-back via-line-via structures. This method of extraction does away with the need to perform probing both on top and below the wafer and thus do not require the use of high cost and complex probe station setup.