Study of Ion implantation induced gate oxide quality problem and its solutions

摘要

The gate oxide film quality of the semiconductor device is the most important element to keep them reliable. In the technique to implant channel dopant ions through thin gate oxide film, the ion implanter equipped with single analyzing magnet causes the gate oxide quality problem due to the energy contamination. The energy contamination aggravates Si crystal damages by increasing recoiled oxygen. It is recommended to use ion implanters equipped with dual analyzing magnet for the sensitive process, particularly when channel doping through thin gate oxide.