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Cupric Chloride-Hydrochloric Acid Microetch Roughening Process and its Applications

机译:氯化铜-盐酸微蚀刻粗化工艺及其应用

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We have developed a cupric chloride-hydrochloric acid based microetchant process. This process provides a unique roughened copper surface, which yields excellent adhesion for both solder mask and dry film photo resist applications. The process also yields excellent solder mask adhesion through subsequent silver, tin and nickel plating post solder mask application.The amount of copper etched using cupric chloride-hydrochloric acid based microetchant is not as high as that seen typically in cupric chloride etching systems. Airborne oxygen is efficient enough to be used as an oxidizer in the system. Hydrochloric acid maintains the proper hydrogen and chloride ion concentrations. The cupric ion maintains itself throughout the process.The chemistry and process are both easily controlled. The process operation is comparable to a mini cupric chloride etcher, whereby copper concentration is maintained by specific gravity and acidity can be controlled by conductivity. It is not necessary to control oxidation-reduction potential, hence the difference as compared to conventional etching processes.This technology provides highly roughened copper surfaces for conventional acid plated copper such as PPR and DC, and standard regular copper clad, which offers great adhesion for solder mask and dry film photo resist. For solder mask applications, it is necessary to produce a rougher topography by controlling micro etching rate at 1.0-1.5 μm/m to get good adhesion between copper surface and solder mask when the final finish is involved in immersion or electroless plating process with tin or nickel. For dry film photo resist applications, the processed copper surface is rough enough to improve the adhesion at micro etching rate below 1.0 μm/m. The copper surface roughness should be controlled within a range to balance the adhesion and resolution when dryfilm photo resist is used for fine line boards.
机译:我们开发了一种基于氯化铜-盐酸的微蚀刻剂工艺。该工艺可提供独特的粗糙铜表面,从而在阻焊膜和干膜光致抗蚀剂应用中均具有出色的附着力。该工艺还通过在阻焊剂涂覆后进行后续的银,锡和镍电镀,产生了极好的阻焊剂附着力。 使用基于氯化铜-盐酸的微蚀刻剂蚀刻的铜量不如通常在氯化铜蚀刻系统中看到的铜量高。空气中的氧气足够有效,可以用作系统中的氧化剂。盐酸保持适当的氢和氯离子浓度。铜离子在整个过程中保持自身。 化学和工艺都易于控制。该工艺操作可与微型氯化铜蚀刻机相媲美,从而可通过比重来保持铜浓度,并可以通过电导率来控制酸度。不需要控制氧化还原电势,因此与常规蚀刻工艺相比没有区别。 该技术为常规的酸镀铜(例如PPR和DC)和标准的规则覆铜箔提供了高度粗糙的铜表面,从而为阻焊膜和干膜光刻胶提供了出色的附着力。对于阻焊层应用,当最终的镀层涉及锡或镍的浸入或化学镀工艺时,有必要通过将微蚀刻速率控制在1.0-1.5μm/ m来产生较粗糙的形貌,以在铜表面和阻焊层之间获得良好的附着力。镍。对于干膜光致抗蚀剂应用,经过处理的铜表面足够粗糙,可以在低于1.0μm/ m的微蚀刻速率下提高附着力。当干膜光刻胶用于细线板时,铜表面粗糙度应控制在一定范围内,以平衡粘附力和分辨率。

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