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Cupric Chloride-Hydrochloric Acid Microetch Roughening Process and its Applications

机译:氯化铜氯化物 - 盐酸微钙粗糙化工艺及其应用

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We have developed a cupric chloride-hydrochloric acid based microetchant process. This process provides a unique roughened copper surface, which yields excellent adhesion for both solder mask and dry film photo resist applications. The process also yields excellent solder mask adhesion through subsequent silver, tin and nickel plating post solder mask application. The amount of copper etched using cupric chloride-hydrochloric acid based microetchant is not as high as that seen typically in cupric chloride etching systems. Airborne oxygen is efficient enough to be used as an oxidizer in the system. Hydrochloric acid maintains the proper hydrogen and chloride ion concentrations. The cupric ion maintains itself throughout the process. The chemistry and process are both easily controlled. The process operation is comparable to a mini cupric chloride etcher, whereby copper concentration is maintained by specific gravity and acidity can be controlled by conductivity. It is not necessary to control oxidation-reduction potential, hence the difference as compared to conventional etching processes. This technology provides highly roughened copper surfaces for conventional acid plated copper such as PPR and DC, and standard regular copper clad, which offers great adhesion for solder mask and dry film photo resist. For solder mask applications, it is necessary to produce a rougher topography by controlling micro etching rate at 1.0-1.5 μm/m to get good adhesion between copper surface and solder mask when the final finish is involved in immersion or electroless plating process with tin or nickel. For dry film photo resist applications, the processed copper surface is rough enough to improve the adhesion at micro etching rate below 1.0 μm/m. The copper surface roughness should be controlled within a range to balance the adhesion and resolution when dryfilm photo resist is used for fine line boards.
机译:我们已经开发了氯化铜 - 盐酸基于微蚀刻过程。此方法提供了一种独特的粗糙化的铜表面,其产生两个焊料掩模和干膜光致抗蚀剂应用中具有优异的粘合性。该方法还通过后续的银,锡和镍电镀后焊料掩模应用产生优异的焊接掩模的粘合性。使用氯化铜 - 盐酸基于微蚀刻是不一样高,在氯化铜蚀刻系统通常看到蚀刻的铜的量。机载氧气将被用作系统中的氧化剂足够有效的。盐酸可保持正确的氢和氯离子浓度。铜离子保持自身的整个过程。化学和工艺都容易控制。的处理操作是相当于一个迷你氯化铜蚀刻剂,由此铜浓度通过比重和酸度保持可以通过电导率来控制。这是没有必要,以控制氧化还原电位,因此差相比于传统的蚀刻工艺如。这种技术提供高度粗糙化的铜表面为常规的酸镀铜如PPR和DC和标准定期覆铜,它提供了对焊料掩模和干膜光致附着力大抗蚀剂。对于焊料掩模应用,有必要通过控制微蚀刻速率在1.0-1.5微米/米,以产生粗糙地形时,最终成品涉及浸渍或电解镀敷处理用锡或获得铜表面与阻焊层之间良好的粘附性镍。干膜光致抗蚀剂应用中,经处理的铜表面是粗糙的,足以提高在低于1.0微米/米的微蚀刻速率的粘附性。铜表面粗糙度应的范围内进行控制时dryfilm光致抗蚀剂被用于精细线板以平衡粘合性和分辨率。

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