Correction technique of EBM-6000 prepared for EUV mask writing

摘要

Image placement (IP) errors caused by electro-static chuck (ESC) and non-flatness of mask are additional factors in writing extreme ultra-violet (EUV) mask, and minimizing their influences is being fervently addressed. New correction technique of EBM-60001 has been developed for EUV mask writing based on the conventional grid matching correction (GMC) without ESC to obtain good reproducibility to satisfy user's requirement to develop EUV mask at an early stage.