Correction methods and EUV exposure mask of EUV exposure mask

摘要

PROBLEM TO BE SOLVED: To provide a method for correcting a mask for EUV exposure which can locally improve reflectance of irradiation light of EUV exposure.;SOLUTION: The present invention provides a method for correcting a mask for EUV exposure having a Mo/Si multilayer film 20 made of molybdenum and silicon laminated onto a substrate, a protective film 30 formed on the Mo/Si multilayer film, and an absorbent film formed on the protective film. The method identifies a defect position of the Mo/Si multilayer film in an exposed region of the protective film, and radiates light rays narrowed to a diameter equal to or less than the wavelength of EUV exposure light to the area covering the defect position in a planar view to form a plurality of openings 2 having maximum widths equal to or less than the wavelength on the upper surface of the mask for EUV exposure.;COPYRIGHT: (C)2013,JPO&INPIT