Impact of Random Dopant Fluctuation on Bulk CMOS 6-T SRAM Scaling

摘要

Based on the statistical 3D device simulation of well scaled 25, 18 and 13nm physical gate length bulk MOSFETs, the impact of Random Dopant Fluctuation on 6-T SRAM is studied in detail. The bias control approach is introduced to improve the scalability of bulk CMOS SRAM. Simulation results indicate that at 13nm physical gate length, bulk CMOS SRAM will face fundamental challenges arising from intrinsic parameter fluctuation, and a replacement by Ultra Thin Body SOI CMOS may be necessary at this point.