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PULSED LASER DEPOSITION OF BaCe0.85Y0.15O3 FILMS

机译:BaCe0.85Y0.15O3薄膜的脉冲激光沉积

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Pulsed laser deposition has been used to grow nanostructured BaCeo.ssYo.isOa-s films.The objective is to enhance protonic conduction by reduction of membrane thickness.Sinteredsamples and laser targets were prepared by sintering BaCe0.85Y0.15O3-δ powders derived by solidstate synthesis.Films 2 to 6 μm thick were deposited by KrF excimer laser on Si and poroussubstrates.Nanocrystalline films were fabricated at deposition temperatures of 600-800 °Cat O2 pressure of 30 mTorr and laser fluence of 1 .2 J/cm 2 .Films were characterized by x-raydiffraction,scanning electron microscopy and electrical impedance spectroscopy.Dense singlephase BaCe0.85Y0.15O3-δ films with a columnar growth morphology is observed,preferred crystalgrowth was found to be dependent upon deposition temperature and substrate type.Electricalconductivity of bulk samples produced by solid state sintering and thin film samples weremeasured over a temperature range of 100 °C to 900 °C in moist argon.Electrical conduction ofthe fabricated films was 1 to 4 orders of magnitude lower than the sintered bulk samples.Withrespect to the film growth direction,activation energy for electrical conduction is 3 times higherin the perpendicular direction than the parallel direction.
机译:脉冲激光沉积已用于生长纳米结构的BaCeo.ssYo.isOa-s薄膜。 目的是通过减少膜厚度来增强质子传导。 通过烧结固体产生的BaCe0.85Y0.15O3-δ粉末制备样品和激光靶。 用KrF准分子激光在Si和多孔表面上沉积2〜6μm厚的薄膜。 在600-800°C的沉积温度下制作纳米晶膜 在O2压力为30 mTorr且激光通量为1 .2 J / cm 2的条件下,通过X射线对胶片进行表征 衍射,扫描电子显微镜和电阻抗光谱法 观察到具有柱状生长形态的BaCe0.85Y0.15O3-δ相薄膜,优选晶体 发现生长取决于沉积温度和衬底类型。 固态烧结产生的大块样品和薄膜样品的电导率分别为 在100°C至900°C的温度范围内在潮湿的氩气中测量。 制成的薄膜比烧结的块状样品低1-4个数量级。 相对于膜的生长方向,导电活化能高3倍 在垂直方向上比在平行方向上。

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