Study on Long-wavelength InGaAs/GaAs Highly Strained Quantum Well Semiconductor Laser

摘要

Long-wavelength materials which can be grown on GaAs substrate have been attracting much interest from the viewpoint of application to telecommunication. Owing to the critical thickness constraints it has been difficult to achieve emission beyond 1.1μm with InGaAs. The detailed study on InGaAs/GaAs highly strained quantum well laser structures are carried out in this paper. We demonstrated a highly strained 1192nm InGaAs/GaAs quantum well laser by changing the growth condition such as decreasing the growth temperature, increasing the growth rate and inserted SBL. The lasing wavelengths for 800-μm-long cavities are 1192nm and the threshold density achieved was 275A/cm~2, the internal efficiency and internal loss is 91% and 6.5cm~(-1) respectively.