NITROGEN DOPED HYDROGENATED AMORPHOUS CARBON FILMS DEPOSITED BY NOVELMICROWAVE SURFACE-WAVE PLASMA CVD

摘要

Nitrogen doped hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen (N) as plasma source. The deposited a-C:N:H films were characterized of their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and currentvoltage characteristics. Optical bad gap decreased gently from 3.0 eV to 2.5 eV with increasing N concentration in the films. The a-C:N:H film shows significantly high electrical conductivity compared to that of N-free a-C:H film.