Analysis of microwave noise sources in 150 GHz SiGe HBTs

摘要

Bias dependent microwave noise characteristics of 150 GHz SiGe HBTs were measured in the 2-26 GHz frequency range. The characteristics are compared with the compact bipolar transistor model HICUM. For noise source analysis and decomposition, a detailed small-signal model with corresponding parameters is employed which is based on HICUM. In particular, the influence of the various noise sources and mechanisms on the minimum noise figure is investigated. Correlation between base and collector current shot noise in SiGe is found to reduce NF_min in the current density and frequency range of investigation.