Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays

摘要

6H-SiC MOS capacitors with a slant oxide layer irradiated under the bias voltages of + 10V and - 10V were formed, and change in the depth profiles of trapped charges in the oxide layer by the irradiation was estimated. The depth profiles were found to be affected with the bias polarity applied to the gate electrode during irradiation. Generation mechanisms of trapped charges in the oxide layers are disucssed in connection with the bias polarity.