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Non-volatile memory devices and programming methods thereof including moving electrons through pad oxide layers between charge trap layers
Non-volatile memory devices and programming methods thereof including moving electrons through pad oxide layers between charge trap layers
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机译:非易失性存储器件及其编程方法,包括使电子移动通过电荷陷阱层之间的焊盘氧化层
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摘要
Non-volatile memory devices and methods of programming a non-volatile memory device in which electrons are moved between charge trap layers through a pad oxide layer are provided. The non-volatile memory devices include a charge trap layer on a semiconductor substrate and storing electrons, a pad oxide layer on the first charge trap layer, and a second trap layer on the pad oxide layer and storing electrons. In a programming mode in which data is written, the stored electrons are moved between a first position of the first charge trap layer and a first position of the second charge trap layer through the pad oxide layer or between a second position of the first charge trap layer and a second position of the second charge trap layer through the pad oxide layer.
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