Electron SPIN Resonance Features of The P sub bl Interface Defect in Thermal Si/SIO sub 2

摘要

K-band electron spin resonance study of high-temperature processed thermal Si/SiO sub 2 structures exhibiting predominantly the P sub b1 signal has allowed improved ESR characterisation of this defect. The results affirm the P sub b1 point symmetry as monoclinic-I, the g matrix beingcharacterized by the principal values g sub 1=2.0058, g sub 2=2.00735, and g sub 3=2.0022+0.0001, where the g sub 2 directio is at an angle of 3+ and -1 degree with a <111> direction at 35.3 sup 0 with the interface plane. The presence of a field angle dependent broadening in the linewidth is unveiled, ascribed to a strain induced spread delta sub g, about 2-3 times lessthan typical for P sub b in (111)Si/SiO sub 2. The signiicance of these rsults in combination with previously attined salient experimental facts is addressed as to the atomic nature of P sub b1.