Defect Structures in Heavily In-Doped II-Vi Semiconductors

摘要

Dependent on the IN-concentration, ranging from 10 sup 16 cm sup -3 to 10 sup 20 cm sup -3, two different types of In-defect ocmplezes were observed in ZnS, CdS, ZnSe, CdSe, ZnTe, And CdTe. The local atomic configuratios ofthe defects formed with In-donors were investigated by perturbed rr angular correlation spectroscopy. For Zns and ZnSe a reversible transitio between the two deect structures occurs in the temperature range from 100K to 300 K. The results are discussed in terms oftwo structural and electronic configurations of the cation vacancy.