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Room-temperature polarized spin-photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects

机译:基于几乎没有缺陷的半导体纳米盘纳米柱结构的室温极化自旋光子界面

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摘要

Owing to their superior optical properties, semiconductor nanopillarsanowires in one-dimensional (1D) geometry are building blocks for nano-photonics. They also hold potential for efficient polarized spin-light conversion in future spin nano-photonics. Unfortunately, spin generation in 1D systems so far remains inefficient at room temperature. Here we propose an approach that can significantly enhance the radiative efficiency of the electrons with the desired spin while suppressing that with the unwanted spin, which simultaneously ensures strong spin and light polarization. We demonstrate high optical polarization of 20%, inferring high electron spin polarization up to 60% at room temperature in a 1D system based on a GaNAs nanodisk-in-GaAs nanopillar structure, facilitated by spin-dependent recombination via merely 2–3 defects in each nanodisk. Our approach points to a promising direction for realization of an interface for efficient spin-photon quantum information transfer at room temperature—a key element for future spin-photonic applications.
机译:由于其优越的光学性能,一维(1D)几何形状的半导体纳米柱/纳米线是纳米光子学的基础。它们还具有在未来的自旋纳米光子学中进行有效偏振自旋光转换的潜力。不幸的是,到目前为止,一维系统中的自旋生成在室温下仍然效率低下。在这里,我们提出了一种方法,该方法可以显着提高具有所需自旋的电子的辐射效率,同时抑制具有有害自旋的电子的辐射效率,同时确保了强自旋和光偏振。我们展示了20%的高光学偏振,在基于GaNAs纳米盘-GaAs纳米柱结构的一维系统中,在室温下高达60%的高电子自旋偏振,通过仅依靠2-3个缺陷的自旋依赖性重组得以促进每个纳米磁盘。我们的方法指出了在室温下实现高效自旋光子量子信息传输接口的有希望的方向,而该接口是未来自旋光子应用的关键要素。

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