Process to determine defects in a regular structure on a carrier as in microelectronic semiconductor components forms a difference signal between differently polarized radiations

摘要

A process to determine defects in a regular structure on a carrier comprises irradiating with two radiations of different polarizations (21,23) and different penetrations compared to the structure height, collecting reflected signals (22,24), forming a difference signal (25) and comparing with a reference difference signal (27). An independent claim is also included for a device for the above process.