Semiconductor detector for detecting radiation, has intermediate memory disconnected from internal gate, where radiation-generated charge carrier signal buffers before charge carrier signals are transferred for reading in gate of structures

摘要

The detector has a depleted p-channel field effect transistor (DEPFET) structure comprising a controllable duct and an internal gate. The internal gate is buried in a semiconductor substrate below the duct to receive charge carrier signals such that the duct controls the accumulated charge carrier signals in the internal gate. An intermediate memory (PM) is disconnected from the internal gate, where the radiation-generated charge carrier signal buffers before the radiation-generated charge carrier signals are transferred for reading in the gate of the structures. The DEPFET structure is one metal oxide semiconductor (MOS) structure, junction field effect transistor (JFET) structure or repetitive non-destructive readout (RNDR) structure. The intermediate memory is vertical p-n-p-structure or MOS structure. An independent claim is also included for a method for operating a semiconductor detector.