Photoluminescence Dynamics in The Near Bandgap Region of Homoepitaxial GaN Layers

摘要

Homoepitaxial MOCVD-grown gallium nitride layers have been studied by photoluminescence measurements nd picosecond time-resolved photoluminescence spectroscopy. The TRPL has shown that the free excitions have the fastest dynamics. Then, the 3.472eV DBE emission rises. The 3.476eV ABE has the slowest decay. The identificatio of the two-electron transiton DBE-D sup * at th energy E sub DBE-22 meV has been confirmed by TRPL measurements. The PL emission of an excition bound to a second acceptor A sub 2Be at -3.457 eV is reported. An analysis of the long living part of the DBE emissio is also presented.