BIPOLAR TRANSISTOR HAVING A BASE REGION WITH A CONSTANT BANDGAP LAYER AND A GRADED BANDGAP LAYER

摘要

A bipolar transistor structure and process technology is described incorporating a emitter, a base, and a collector, with most of the intrinsic base adjacent the collector having a graded energy bandgap and a layer of the intrinsic base adjacent the emitter having a substantially constant energy bandgap. The invention has a smaller base transit time than a conventional graded-base-bandgap bipolar transistor.