Effect of La dopant on electrical properties of Pb(Zr,Ti)O{sub}3 thin film capacitors

摘要

Lanthanum doped lead zirconate titanate (PZT) thin films have been prepared on Pt/IrO{sub}2/Ir/SiO{sub}2/Si substrates to improve the ferroelectric and retention properties. The microstructure and electrical properties of the PZT capacitors were evaluated as a function of La content. The crystalline orientation was appreciably influenced by the addition of La in PZT thin films. The microstructures of films containing 0 and 0.5 mol% La were single phase perovskite, but for La = 1 mol%, a second phase was detected by SEM observation. The 0.5 mol% La doped PZT thin film capacitor showed the best ferroelectric and retention properties for ferroelectric random access memory compared to non-doped PZT.