Lateral growth rate enhancement on patterned GaAs substrates with CCl_4 by MOCVD

摘要

We have investigated the CCl_4 dop0ing effect during MOCVD on patterned gaAs substrate. It was shown that the CCl_4 flow rate was a very important parameter which enhanced the lateral growth rate of GaAs/AlGaAs on patterned substrates. With supplying of CCl_4, the increase of GaAs lateral growth rate was remarkable and the increment could be described as a linear function of CCl_4 flow rate. The lateral growth rate increased up to 700 deg C, but it cdereased for more elevated growth temperature. With increasing the V/III ratio, the lateral growth rate oincreased, but at higher V/III ratio the increment seems to be saturated. This novel characteristics can be utilized in fabricating very novel quantum wire like structure.