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Controlled Microcutting Tests on Single Crystal Silicon

机译:在单晶硅上控制的微包测试

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Precision grinding (1) is accomplished by the cutting action of many sharp diamonds embedded in the wheel binder material. The fracture damage in the resulting part is dependent on the material properties and oeprating conditions. Considering grinding as a multi-scratch process, the response of a single cutting grain and the damage transitions produced by the cutting action as the load on the grain is varied, will be of primary interest. The microcutting action of a single cutter is important because it plays a key role in determining the subsurface fracture damage produced in processes such as polishing and grinding (1,2). In recent studies with glass and amorphous SiC thin films, Tanikella and Scattergood (3,4,5) demonstrated a one-to-one correspondence between crack-initiation and depth-of-cut during microcutting. Extension of the results using statistical averaging effects will facilitate the prediction of the surface finish and subsurface fracture damage. The effect of crystallography is important for developing these models for crystalline materials. The purpose of the present work is to investigate hte cracking thresholds, crystallography, and tool geometry effects for single crystal silicon. An understanding of the micromechanics of silicon would also enhance its utility as a high-precision, high-strenght, high-reliability mechanical material, especially applicable in micro mechanical devices and components in conjunction with integrated electronics.
机译:精密研磨(1)通过嵌入车轮粘合剂材料中的许多尖锐菱形的切割作用来实现。所得部分中的断裂损伤取决于材料性质和OEPrating条件。考虑到磨削作为多划痕工艺,随着晶粒上的负荷而变化,单个切割纹的响应和由切割动作产生的损伤过渡是多样的。单个切割器的微检查作用很重要,因为它在确定抛光和研磨等过程中产生的地下断裂损坏时发挥着关键作用(1,2)。在最近用玻璃和无定形SiC薄膜的研究中,坦克拉和散射酵母(3,4,5)在微皮丁宁期间裂缝起始和切割深度之间的一对一对应。使用统计平均效果的延伸将有助于预测表面光洁度和地下断裂损伤。晶体学的作用对​​于为结晶材料开发这些模型是重要的。本作工作的目的是研究单晶硅的HTE裂解阈值,晶体学和刀具几何效果。对硅的微机械测量的理解也将提高其效用作为高精度,高强度,高可靠性机械材料,特别适用于微型机械装置和组件,与集成电子器件一起使用。

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