Advances In Silicon Carbide Device Processing And Substrate Fabrication For High Power Microwave And High Temperature Electronics

摘要

High power density, temperature and radiation tolerant SiC electronics offer an exceptional opportunity to increase the performance and lower the cost of systems ranging from radar transmitters, to aircraft and tank controls, to missile sensors. Growth and fabrication of 2-inch diameter semi-insulating and low resistivity wafers, MESFETs with 25GHz cutoff frequencies and 2-3X the power density of GaAs devices, the world's first SiC static induction transistor, and 300°C analog and digital MOSFET circuits are among recent technological advances.