A Simple Method to Extract the Parasitic Resistances from a Single MOSFET using Measurements of Small-Signal Conductances

摘要

In this paper, we present a new and simple method to extract the source (RS) and drain (RD) parasitic resistances of a MOSFET separately, using small-signal transconductance (gm) and drain conductance (gd) measurements on a single MOSFET. Unlike most earlier methods that depend on the measurements of the d.c. resistances of several MOSFETs, our method can be directly applied to situations involving the early-mode hot-carrier degradation where the source and drain resistances differ due to stressing, and asymmetrical layouts or processing of source and drain sides. The method yields reasonably accurate values of RS and RD when compared with a conventional method. The error terms are also discussed.